Localized surface phonon polariton resonances in polar gallium nitride
نویسندگان
چکیده
Kaijun Feng, William Streyer, S. M. Islam, Jai Verma, Debdeep Jena, Daniel Wasserman, and Anthony J. Hoffman Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA Department of Electrical and Computer Engineering, University of Illinois Urbana-Champaign, Urbana, Illinois 61801, USA School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14850, USA
منابع مشابه
Aspect-ratio driven evolution of high-order resonant modes and near-field distributions in localized surface phonon polariton nanostructures
Polar dielectrics have garnered much attention as an alternative to plasmonic metals in the mid- to long-wave infrared spectral regime due to their low optical losses. As such, nanoscale resonators composed of these materials demonstrate figures of merit beyond those achievable in plasmonic equivalents. However, until now, only low-order, phonon-mediated, localized polariton resonances, known a...
متن کاملSurface Phonon Coupling within Boron Nitride Nanotubes Resolved by a Novel Near-Field Infrared Pump-Probe Imaging Technique
Surface phonon-polariton (SPhP) modes exist under optical excitation of polar materials, and are accessible using scattering type near-field optical microscopy (s-SNOM). Hexagonal boron nitride (hBN) and boron nitride nanotubes (BNNTs) can exhibit such modes under IR excitation, in spectral regions where the permittivity is negative. Herein we present pump-probe continuous wave (CW) sSNOM a nov...
متن کاملTheoretical Investigation of Phonon Polaritons in SiC Micropillar Resonators
Of late there has been a surge of interest in localised phonon polariton resonators which allow for sub-diffraction confinement of light in the mid-infrared spectral region by coupling to optical phonons at the surface of polar dielectrics. Resonators are generally etched on deep substrates which support propagative surface phonon polariton resonances. Recent experimental work has shown that un...
متن کاملRaman Measurements and Stress Analysis in Gal- lium Ion Implanted Gallium Nitride Epitaxial Lay- ers on Sapphire
In this article, we estimate hydrostatic stress developed in gallium ion implanted gallium nitride epitaxial layers using Raman measurements. We have calculated deformation potential constants for E2(high) mode in these epi-layers. The presence of a polar phonon-plasmon coupling in these systems has also been demonstrated. In as-implanted samples, with an increase in implantation fluence, we ha...
متن کاملPolarization Enhanced Charge Transfer: Dual-Band GaN-Based Plasmonic Photodetector
Here, we report a dual-band plasmonic photodetector based on Ga-polar gallium nitride (GaN) for highly sensitive detection of UV and green light. We discover that decoration of Au nanoparticles (NPs) drastically increases the photoelectric responsivities by more than 50 times in comparition to the blank GaN photodetector. The observed behaviors are attributed to polarization enhanced charge tra...
متن کامل